Description
The integrated AM3200 Pulse IV and Pulsed S-Parameter characterization platform provides advanced on-wafer measurement capabilities for RF, microwave and power semiconductor devices. The system combines fast pulsed biasing with high-performance vector network analysis and precision wafer probing for accurate characterization under quasi-isothermal operating conditions.
The AM3200 Pulse IV system enables synchronized gate and drain pulse generation, allowing device characterization while minimizing self-heating effects. Pulsed IV measurements support compact model extraction, trapping analysis and reliability evaluation.
The Rohde & Schwarz ZNA26 vector network analyzer provides high-accuracy S-parameter measurements from 10 MHz to 26.5 GHz. When synchronized with the pulsed bias system, the platform enables pulsed S-parameter characterization of active devices under realistic operating conditions.
The FormFactor Summit 200 probe station with thermal chuck supports measurements from -60 C to 300 C, enabling temperature-dependent device characterization and model validation.
Typical measurements
- Pulsed I-V curves
- S11, S21, S12, S22 parameters
- Transconductance and output conductance
- Current collapse and trapping effects
- Temperature-dependent RF performance
- Gain, stability, and matching characteristics
- Equivalent circuit extraction
Applications
- GaN HEMT characterization
- RF transistor modeling
- Power amplifier development
- Semiconductor process development
- University and industrial research
- Reliability and lifetime studies
Techniques
- Pulsed I-V characterization
- Pulsed S-parameter measurements
- Small-signal RF characterization
- Thermal-dependent device characterization
- Bias-dependent S-parameter analysis
- Compact model extraction
- Trapping and dispersion analysis
- GaN and SiC device characterization
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