Description
The STS AGE ICP – Chlorine is a load locked, inductively coupled plasma etch system. Process gases are boron trichloride (BCl3), chlorine (Cl2), methane (CH4), hydrogen (H2), oxygen (O2) and argon (Ar). The system is for the etching of compound semiconductors and dielectrics. Masks allowed in this system are photoresist and dielectrics.
This tool requires pre-requisite training on other techniques: PlasmaLab M80 Plus – Fluorine OR PlasmaLab M80 Plus – Chlorine OR PlasmaTherm 790 RIE – Fluorine.
Specs:
Wafer Size: 100 mm wafers. Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier. Platen Size: 100 mm.
ICP Power Range: 0 – 1000 Watts
Bias Power Range: 0 – 600 Watts
MFC Flow Range:
CH4: 0 – 200 sccm
H2: 0 – 200 sccm
Cl2: 0 – 50 sccm
BCl3: 0 – 50 sccm
Ar: 0 – 30 sccm
O2: 0 – 50 sccm
Pressure Range: < 90 mTorr
Backside Cooling: Helium. Clamped
Techniques
- Dry etch
- Inductively coupled plasma etching
Rates
| Service or material | ASU rate | Nonprofit or academic rate | Notes |
|---|---|---|---|
| Equipment use | $52.50/hr | Contact Nanofab for external rates. |
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