Description
Agnitron Agilis 100 – Growth of UWB oxide films such as beta, alpha, and epsilon phases of Ga2O3 and AlGa2O3. Similar to the Mini Agilis 50, the Agilis 100 employs a vertical MOCVD reactor geometry with RF induction for substrate heating in the 400 °C to 1050 °C temperature regime.
Techniques
- MOCVD
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