Description
Agnitron Mini Agilis 50 – Growth of UWB nitride films (e.g., AlN, AlGaN, and GaN) for various applications such as research into power electronic devices. The vertical flow geometry, double-wall, water-cooled, quartz tube reactor accommodates up to a single 2-inch diameter wafer and has induction heating for temperatures from 600 °C to >1550 °C.
Techniques
- MOCVD
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