Description
The Atomic Layer Deposition (ALD) offers precise control down to the atomic scale. The ALD deposition reaction keeps the precursor materials separate during the reaction. This is accomplished through sequential pulsing of special precursor vapors, each of which forms about one atomic layer during each pulse (reaction cycle). Reaction cycles are then repeated until the desired film thickness is achieved.
The ALD deposition systems are designed to deposit pinhole free coatings that are perfectly uniform in thickness, even deep inside pores, trenches and cavities. The ability to deposit such high-quality films on substrates with ultra-high aspect ratios is a key feature of our atomic layer deposition systems.
A wide variety of thin films can be deposited using our precursors:
- Can accommodate wafers with a diameter up to 300mm.
- Substrate temperature up to 350C.
- Ozone generator.
- 6 precursor inlets on the system.
- Typical uniformity less than 1% for Al2O3.
Techniques
- Atomically precise, pinhole-free deposition
- Conformal deposition over high aspect ratios
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