Description
The P-5000 has been modified to robotically handle 156 mm solar substrates as the native form factor, but substrates up to 150 mm round can be accommodated on carriers. The tool is loadlocked and has three separate processing chambers to provide plasma enhanced chemical vapor deposition of various films including SiN, SiC, SiOx SiON, and doped and undoped a-Si:H. Phosphine and trimethyl boron serve as the n and p doping sources.
Techniques
- PECVD
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