Thermal processing

Our thermal techniques include two furnace banks and two rapid thermal processing (RTP) tools. One furnace bank is a three-stack Tystar TYTAN 4600 Mini Furnace system, and the other is a four-stack Tempress furnace. These furnace processes are used only for silicon materials and include silicon oxidation, phosphorus or boron dopant diffusion, Low-Pressure Chemical Vapor Deposition (LPCVD) polycrystalline silicon, LPCVD silicon nitride (Si3N4), and high temperature anneal (H2-N2 metal anneal).

Furnace process capabilities

Tystar Furnace	Source gases	Temperature	Targets	Range/limits	Material	Clean
Field oxidation	O2 + H2O (steam)	900-1050°C	Thickness	<=2μm	Si only	Pir, SC1, SC2
Gate oxidation	O2 + Cl (trans_LC)	900-1000°C	Thickness	5 nm to 150 nm	Si only	Pir, SC1, SC2, BOE
LPCVD Polysilicon	SiH4	650°C	Thickness	<1μm	Si or SiO2 only	Check
LPCVD amorphous silicon	SiH4	550°C	Thickness	<1μm	Si or SiO2 only	Check
Stoichiometric PLCVD nitride	DCS + NH3	750°C	Thickness	<300nm	Si only
Low stress LPCVD nitride	DCS + NH3	835°C	Thickness	<1μm	Si only

 

RTP process capabilities

RTP	Temperature range	Materials	Times	Atmosphere	Sample size
AS-One 100	<1000°C	Various materials	<5 min	N2, Ar, or Forming Gas	<= 4″
AS-One 150	<1000°C	No Au, Ag, or Cu	<5 min	N2, Ar, or Forming Gas