Advanced Electronics and Packaging research

The following examples illustrate some of the capabilities available to you through the Advanced Electronics and Packaging facility.

Selected publications

“Tuning Film Stresses for Open-Air Processing of Stable Metal Halide Perovskites”, Muneeza Ahmad, Carsen Cartledge, Gabriel McAndrews, Antonella Giuri, Michael D. McGehee, Aurora Rizzo, and Nicholas Rolston, ACS Applied Materials & Interfaces 2023 15 (44), 51117-51125.

“Robust and Manufacturable Lithium Lanthanum Titanate-Based Solid-State Electrolyte Thin Films Deposited in Open Air“, Mohammed Sahal, Jie Molloy, Venkateshwaran, Ravi Narayanan, Leila Ladani, Xiaochuan Lu, and Nicholas Rolston, ACS Omega, 2023.

“Quantifying and Reducing Ion Migration in Metal Halide Perovskites through Control of Mobile Ions”, Saivineeth Penukula, Rodrigo Estrada Torrejon, and Nicholas Rolston, Molecules, 2023.

“Substrate and Passivation Techniques for Flexible Amorphous Silicon-Based X-ray Detectors”, Michael A.Marrs and Gregory B. Raupp, Sensors, 2016.

“Flexible Amorphous Silicon PIN Diode Sensor Array Process Compatible with Indium Gallium Zinc Oxide Transistors”, Michael A. Marrs, Edward J. Bawolek, Barry P. O’Brien, Joseph T. Smith, Mark Strnad, and David C. Morton. SID Symposium Digest of Technical Papers, 2014.

“Flexible amorphous silicon PIN diode x-ray detectors”, Michael Marrs, Edward Bawolek, Joseph T. Smith, Gregory B. Raupp, and David Morton., Proceedings of SPIE Volume 8730, Flexible Electronics, 2013.

“Comparison of Wet and Dry Etching of Zinc Indium Oxide for Thin Film Transistors with an Inverted Gate Structure”, Michael A. Marrs; Bryan D. Vogt, and Gregory B. Raupp, Journal of Vacuum Science and Technology A, 2012.

“Control of Threshold Voltage and Saturation Mobility Using Dual-Active-Layer Device Based on Amorphous Mixed Metal–Oxide–Semiconductor on Flexible Plastic Substrates”, Michael A. Marrs; Curtis D. Moyer; Edward J. Bawolek; Rita J. Cordova; Jovan Trujillo; Gregory B. Raupp, IEEE Transactions on Electron Devices, 2011.

“Stability of IZO and a-Si:H TFTs Processed at Low Temperature (200°C )”, Korhan Kaftanoglu; Sameer M. Venugopal; Michael Marrs; Aritra Dey; Edward J. Bawolek; David R. Allee, IEEE Journal of Display Technology, 2011.

“Low Temperature Zinc Indium Oxide Backplane Development for Flexible OLED Displays in a Manufacturing Pilot Line Environment”, Michael A. Marrs, Sameer M. Venugopal, Curtis D. Moyer, Edward J. Bawolek, Dirk Bottesch, Barry P. O’Brien, Rita J. Cordova, Jovan Trujillo, Cynthia S. Bell, Douglas E. Loy, Gregory B. Raupp & David R. Allee. Presented at the Material Research Society Fall Meeting, 2010.

“Active Matrix Electrophoretic Displays on Temporary Bonded Stainless Steel Substrates with 180 °C a-Si:H TFTs”, Shawn M. O’Rourke, Sameer M. Venugopal, Gregory B. Raupp, David R. Allee, Scott Ageno, Edward J. Bawolek, Douglas E. Loy, Jann P. Kaminski, Curt Moyer, Barry O’Brien, Ke Long, Michael Marrs, Dirk Bottesch, Jeff Dailey, Jovan Trujillo, Rita Cordova, Mark Richards, Daniel Toy, Nicholas Colaneri, Presented at the Society for Information Display Conference, 2008.

“Low-temperature amorphous-silicon backplane technology development for flexible displays in a manufacturing pilot-line environment”, Gregory B. Raupp, Shawn M. O’Rourke, Curt Moyer, Barry P. O’Brien, Scott K. Ageno, Douglas E. Loy, Edward J. Bawolek, David R. Allee, Sameer M. Venugopal, Jann Kaminski, Dirk Bottesch, Jeff Dailey, Ke Long, Michael Marrs, Nick R. Munizza, Hanna Haverinen, Nicholas Colaneri, presented at the Society for Information Display Conference, 2007.

Selected patents

US8383520B2, “Method of etching organosiloxane dielectric material and semiconductor device thereof”

US8999778B2, “Method of providing a flexible semiconductor device at high temperatures and flexible semiconductor device thereof”

US9601530B2, “Dual active layers for semiconductor devices and methods of manufacturing the same”

US9721825B2, “Method of providing a flexible semiconductor device and flexible semiconductor device thereof”

US9851796B2, “Tactile keys and methods for their production and use”

US9953951B2, “Method of providing a flexible semiconductor device and flexible semiconductor device thereof”

US9991311B2, “Dual active layer semiconductor device and method of manufacturing the same”