JEOL JBX-6000 FS/E Electron Beam Lithography

Description

The JEOL Electron Beam Lithography system is capable of providing patterned features with dimensions down to 20nm and pattern to pattern overlay of <40nm. Training on this tool requires pre-requisite training on other techniques: metrology, photoresist coating, metal deposition and SEM analysis.

Specs:
Accelerating voltage: 50 keV
Minimum beam diameter: 5nm
Minimum pixel size: 1.25 nm (5th lens), 12.5 nm (4th lens)
Field size: 80 x 80 um (5th lens), 800 x 800 um (4th lens)
Resolution: 20-30 nm (5th lens)
Alignment accuracy: <40 nm
Pattern format: GDS (DXF, DWG convertible with offline software)
Substrate chucks:

  • Piece part chuck – 5 x 5, 5 x 10, 10 x 10, 20 x 20 mm. Sample size cannot be larger than 40 mm diameter
  • 4” wafer
  • 6” wafer
  • 8” wafer (6” diameter exposure area)
  • 5” x 5” mask

Learn more about lithography deposition technique and associated tools.

Training:
There are eight training modules that must be completed before using this system. Contact Kevin Nordquist for more information. 

Techniques
  • Lithography
ASU Unit
Knowledge Enterprise
Rates
Service ASU Internal Rate External Organizations Notes
Equipment use $50 per Hour Contact NanoFab  
We welcome industry customers! Contact us to find out our current rates.