PlasmaTherm 790 RIE – Fluorine


The PlasmaTherm 790 RIE – Fluorine is an open load reactive ion etch system. Process gases are SF6, CHF3, CF4, O2 and Ar. The system is for the etching of semiconductors, dielectrics and metals. Masks allowed in this system are photoresist and dielectrics.

This tool requires pre-requisite training on other techniques: metrology.

Wafer Size: 200 mm maximum. Wafers smaller than 200 mm and irregularly shaped samples can be placed directly on platen.
Platen Size: 279 mm
Power Range: < 350 W
MFC Flow Range: 0 – 100 sccm for all gases.
Pressure Range: < 900 mTorr

Learn more about dry etch deposition technique and associated tools, such as reactive ion etching.

  • Dry etch, reactive ion etching
Documents and manuals
ASU Unit
Knowledge Enterprise
Service ASU Internal Rate External Organizations Notes
Equipment use $46.35 per Hour Contact NanoFab  
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Plasma Therm 790 REI Fluorine