STS AGE ICP - Chlorine


The STS AGE ICP – Chlorine is a load locked, inductively coupled plasma etch system. Process gases are BCl3, Cl2, CH4, H2, O2 and Ar. The system is for the etching of compound semiconductors and dielectrics. Masks allowed in this system are photoresist and dielectrics.

This tool requires pre-requisite training on other techniques: PlasmaLab M80 Plus – Fluorine OR PlasmaLab M80 Plus – Chlorine OR PlasmaTherm 790 RIE – Fluorine.

Wafer Size: 100 mm wafers. Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier. Platen Size: 100 mm.
ICP Power Range: 0 – 1000 Watts
Bias Power Range: 0 – 600 Watts
MFC Flow Range:
         CH4:  0 – 200 sccm
         H2:    0 – 200 sccm
         Cl2:   0 – 50 sccm
         BCl3: 0 – 50 sccm
         Ar:     0 – 30 sccm
         O2:    0 – 50 sccm
Pressure Range: < 90 mTorr
Backside Cooling: Helium. Clamped

Learn more about dry etch deposition technique and associated tools, such as inductively coupled plasma etching 

  • Dry etch, Inductively coupled plasma etching
ASU Unit
Knowledge Enterprise
Service ASU Internal Rate External Organizations Notes
Equipment use $46.35 per Hour Contact NanoFab  
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STS AGE ICP - Chlorine