STS ASE ICP DRIE – Fluorine

The STS ICP Deep Reactive Ion Etch System (DRIE) is a highly specialized system used for deep silicon etching using the Bosch process. The STS ASE ICP DRIE is a load locked, inductively coupled plasma etch system that uses sulfur hexaflouride (SF6), octafluorocyclobutane (C4F8), oxygen (O2), and argon (Ar) process gases. The system is designed for 150 mm wafers with one SEMI flat, and smaller wafers or irregularly shaped samples must be placed on a 150 mm carrier. The ICP power range of the system is 10-900 Watts, and the bias power range is 0-900 Watts, allowing for precise control of the etching process.

_________________

The STS ASE ICP DRIE – Fluorine is a load locked, inductively coupled plasma etch system. Process gases are sulfur hexaflouride (SF6), octafluorocyclobutane (C4F8), oxygen (O2) and argon (Ar). The system is for deep silicon etching using the Bosch process. Masks allowed in this system are photoresist and silicon dioxide (SiO2).

This tool requires pre-requisite training on other techniques: Super User AND PlasmaLab M80 Plus – Fluorine OR Super User AND PlasmaLab M80 Plus – Chlorine OR Super User AND PlasmaTherm 790 RIE – Fluorine.

Specs:
Wafer Size: 100 mm wafers. Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier. Platen Size: 100 mm.
ICP Power Range: 0 – 900 Watts
Bias Power Range: 0 – 30 Watts
MFC Flow Range:
        SF6:      0 – 300 sccm
        C4F8:    0 – 200 sccm
        O2:        0 – 100 sccm
        Ar:         0 – 100 sccm.
Pressure Range: < 90 mTorr
Backside Cooling: Helium. Clamped.
Selectivity to Photoresist: 50:1.
Selectivity to Wet Thermal SiO2: 100:1.
Typical Repeatable Aspect Ratio: 10:1.

Learn more about dry etch deposition technique and associated tools, such as inductively coupled plasma etching and Bosch process.