The PECVD process offers good step coverage over features. Our films include Silicon Dioxide (SiO2), Silicon Nitride (Si3N4) and lower stress Oxynitride (SiON) films. The PECVD films offer more flexibility than ALD with higher deposition rates leading to higher throughputs. The substrate, which is placed on the grounded electrode, is typically heated to 350C at a mid-pressure of 1 Torr.
- Thin film deposition
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