Description
Molecular beam epitaxy (MBE) is an ultra-high vacuum crystal growth technique, offering the ability to control material composition down to the atomic layer level. The MBE in the Solar Fab is a state-of-the-art Gen III Veeco system. The system is fitted with gallium, indium, aluminum, phosphorus, antimony, arsenic and nitrogen sources, thereby allowing the growth of a large number of III-V material combinations.
Location: MTW - MacroTechnology Works, cleanroom 2214
Techniques
- MBE
ASU Unit
Knowledge Enterprise
Photos