The Applied Materials AKT1600 is a panel etcher and panel deposition tool with four loading ports, two vacuum load locks, and five chambers. Two chambers (A and B) are designated for etching, processing a maximum of two panels at a time. Etch Chamber A is used primarily for etching SiN. Available gases for Chamber A are CHF3, He, O2, and SF6. Etch Chamber B is used to etch Al, Mo, ITO and ASi. Available gases are CHF3, He, O2, BCl3, Cl2, HCl and CH4.
The three deposition chambers are single panel chambers. Chamber D is used to deposit SiN and a-Si. Chamber C is used to deposit material doped n-type and chamber E to deposit materials doped p-type although both chambers can also deposit undoped amorphous silicon. Gases used in Chamber C are NF3, Ar, SiH4, N2, 1% B2H6/H2, 1% PH3/H2, H2. Gases used in Chamber D are NF3, Ar, N2O, NH3, N2, SiH4 and H2. Gases used in Chamber E are NF3, Ar, SiH4, N2, 1% B2H6/H2, 1% PH3/H2, and H2.
Panels are loaded into a cassette which is loaded onto the tool ports A,B,C,D and then clamped into place. The atmospheric robot is commanded to pick up a panel and move it into one of two elevators labeled Left Load Lock and Right Load Lock. There are 12 slots available in each load lock elevator to stage panels for processing. After the load lock is pumped down, the vacuum robot end effector is commanded to pick the panel out of the elevator slot and move it into the desired chamber for recipe processing.
- Reactive ion etching of various layers and thicknesses of dielectrics and metals
- Plasma enhanced chemical vapor deposition