The Nanometrics RPM 2000 Photoluminescence Mapper utilizes the properties of photoluminescence to map defects in a semiconductor layer. The technique is considered non destructive and is contactless to the sample surface. The RPM 2000 irradiates the film under test with a laser of known wavelength. The incident light from the laser is absorbed by the semiconductor film where it excites electrons. Energy given off by excited electrons in the film may be emitted as light, the spectra of which reveals details regarding the bandgap of the material and the presence of impurities (intentional or not) traps or other defects in the in the film.
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